PROJECT TITLE :

Impact of Voltage-Accelerated Stress on Hole Trapping at Operating Condition

ABSTRACT:

This letter shows that voltage-accelerated stressing (VAS), a typical methodology used in gate-oxide reliability testing, can amendment the capture activity of a time-zero oxide lure (i.e., already active below operating condition). It is found that after VAS, a time-zero oxide entice will be rendered either considerably more or less seemingly to capture a hole, implying that the applied electrical stress could have modified the atomic structure of the lure. The question on whether such amendment is relevant to reliability testing would need to be more thought-about carefully given the many impact that charge trapping/detrapping at one oxide trap may have on the behavior of a tiny-area MOSFET.