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  3. Microelectronics and Nanometer Structures
  4. High-resolution nanopatterning by achromatic spatial frequency multiplication with electroplated grating structures
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Category: Microelectronics and Nanometer Structures
By MTech Projects
MTech Projects
06.Apr
Hits: 9

High-resolution nanopatterning by achromatic spatial frequency multiplication with electroplated grating structures

PROJECT TITLE :

High-resolution nanopatterning by achromatic spatial frequency multiplication with electroplated grating structures

ABSTRACT:

The authors demonstrate generation of high-resolution nanostructures using achromatic spatial frequency multiplication in the extreme ultraviolet wavelength region. The technique based on the achromatic Talbot effect is used for periodic transmission gratings under wideband illumination, enabling one- and two-dimensional nanopatterns with sub-20 nm feature sizes. The transmission masks with desired properties are fabricated with electron-beam lithography followed by electroplating of gold. Features sizes down to 12 nm are obtained. The presented technique provides high-throughput and large-area nanopatterning with great flexibility in tuning pattern parameters such as linewidth and dot size.

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  • Characterization of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (001) GaAs substrates
  • UV capillary force lithography for multiscale structures
  • Molecular beam epitaxy control and photoluminescence properties of InAsBi
  • Photoelectron spectroscopy studies of plasma-fluorinated epitaxial graphene
  • Graphene functionalization and seeding for dielectric deposition and device integration
  • Electrical properties of C60 and Si codoped GaAs layers
  • Graphene stripper foils
  • Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)
  • Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates
  • Magnetic anisotropy of GaAs/Fe/Au core-shell nanowires grown by MBE
Previous article: Impact of mask absorber thickness on the focus shift effect in extreme ultraviolet lithography Impact of mask absorber thickness on the focus shift effect in extreme ultraviolet lithography Next article: Analytical and experimental evaluation of a counting method for particles added during the mask handling process Analytical and experimental evaluation of a counting method for particles added during the mask handling process
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