PROJECT TITLE :

Memristive Hebbian Plasticity Model: Device Requirements for the Emulation of Hebbian Plasticity Based on Memristive Devices

ABSTRACT:

During this work we tend to gift a phenomenological model for synaptic plasticity suitable to explain common plasticity measurements of memristive devices. We have a tendency to show evidence that the presented model is essentially compatible with advanced biophysical plasticity models, that account for a giant body of experimental information on spike-timing-depending plasticity (STDP) as an uneven kind of Hebbian learning. The fundamental characteristics of our model are a saturation of the synaptic weight growth and a weight dependent learning rate. Moreover, it accounts for common resistive switching behaviors of memristive devices below voltage pulse application and allows to review essential necessities of individual memristive devices for the emulation of Hebbian plasticity in neuromorphic circuits. In this respect, memristive devices primarily based on mixed ionic/electronic and one completely electronic mechanism are explored. The ionic/electronic devices carries with it the layer sequence metal/isolator/metal and represent these days's most widespread devices. The electronic device is a MemFlash-cell that is predicated on a conventional floating gate transistor in an exceedingly diode configuration wiring scheme exhibiting a memristive (pinched) I-V characteristic.