PROJECT TITLE :
Photo-Stable Transparent Nonvolatile Memory Thin-Film Transistors Using In–Ga–Zn–O Channel and ZnO Charge-Trap Layers
We propose fully transparent charge-entice-sort memory thin-film transistors (TFTs) with a prime-gate structure composed of ZnO charge-trap and In-Ga-Zn-O active channel layers on glass substrates. Nonvolatile memory characteristics, like a good memory window, high-speed programming, and stable retention characteristics, were confirmed even beneath the illumination of red, green, blue, and white lights. The photo-stable characteristics of the proposed memory TFTs originate from the robust bias illumination stress stabilities of the employed gate-stack structure. The flip-ON voltages (VON) failed to fluctuate with the variations of the bias polarity and wavelength of the illumination stresses. The most shift of VON observed was as tiny as -0.four V at a negative bias stress of -twenty V underneath a blue wavelength once 60zero s.
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