PROJECT TITLE :

Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry

ABSTRACT:

The effective mobility ( $mu _rm eff$ ) of MOSFETs with ultrathin high- $k$ gate dielectric ( $rm EOT= 0.85$ nm) has been successfully extracted employing a time domain reflectometry method. A ground–signal–ground–ground probe configuration is used to analyze the gate-to-channel capacitance ( $C_rm gc$ ), gate-to-bulk capacitance ( $C_rm gb$ ), and total gate capacitance ( $C_g$ ) while not a complex RF check structure. Using this methodology, the effective mobility can be extracted even in the presence of a high gate leakage current ( $sim 30$ A/cm $^rm 2$ ) when the conventional split capacitance–voltage methodology using an impedance analyzer can not be applied.