PROJECT TITLE :

The Role of Geometry Parameters and Fin Aspect Ratio of Sub-20nm SOI-FinFET: An Analysis Towards Analog and RF Circuit Design

ABSTRACT:

Nowadays FinFETs integrated into complex circuit applications will fulfill the demand of smartphones and tablets for better performance and build chips that may compute faster. This paper studies the impact of and variations on varied performance matrices as well as static in addition to dynamic figures of benefit (FOMs). With the assistance of aspect ratio ( ), the device is branched into three components, i.e., FinFET, Trigate, and Planar MOSFET. This distinctive report is a presentation of a close analysis regarding the impact of fin height ( ) and width ( ) on various performances including the dc along with ac FOMs. The static or low-frequency performances like threshold voltage ( ), on current ( ), off current ( ), power dissipation, transconductance ( ), output conductance ( ), transconductance generation factor ( ), early voltage ( ), gain ( ), and dynamic or high-frequency performances as gate capacitance ( ), cutoff frequency ( ), output resistance (- inline-formula> ), intrinsic delay are systematically presented with the variation of device geometry parameters. The results presented in this paper will be of nice help to device engineers in designing three-D devices as per their requirement.