PROJECT TITLE :

Thermal Stress and High Temperature Effects on Power Devices in a Fault-Resilient NPC IGCT-Based Converter

ABSTRACT:

The integrated gate-commutated thyristor and presspack power diodes have been successfully applied in medium-voltage neutral purpose-clamped converters in the facility vary from hundreds of kilowatt to tenths of megawatt. Responsible for driving key processes within the trade, high reliability and availability are crucial for these converters, since their repair or replacement once failure events may take too long. Given the vital importance of such equipment for the drive systems, they are equipped with protection schemes that are typically reliable, however not infallible. If the protection scheme of the converter does not work properly in a short-circuit state of affairs, serious damages could be expected on its power semiconductor devices. During this paper, the facility semiconductors thermal behavior is investigated using finite-component models in the COMSOL Multiphysics software. 3-dimensional thermal models of the power devices were raised by industrial radiography techniques, getting to expand the information provided by the manufacturers. The authors show how these results will be employed in a real equipment to attenuate the catastrophic effects of the protection scheme malfunction, thus limiting the harm pattern among the converter to their least complicated power devices.