PROJECT TITLE :

GaN Microwave DC–DC Converters

ABSTRACT:

This paper presents the planning and characterization of dc–dc converters operating at microwave frequencies. The converters are based mostly on GaN transistor class-E power amplifiers (PAs) and rectifiers. Three topologies are presented, that are: 1) a PA and synchronous rectifier, requiring 2 RF inputs; 2) a PA and self-synchronous rectifier with a single RF input; and 3) an influence oscillator with a self-synchronous rectifier with no needed RF inputs. The synchronous one.2-GHz class-$hboxE^2$ converter reaches a most potency of 72% at four.6 W. By replacing the RF input at the rectifier gate with a specific termination, a self-synchronous circuit demonstrates 75% potency at 4.vi W, with a most output power of thirteen W at fifty eightp.c potency. Within the third topology, the PA is replaced by a power oscillator by providing correct feedback for class-E operation, ensuing during a circuit requiring no RF inputs. This oscillating self-synchronous dc–dc converter is demonstrated at 900 MHz with an efficiency of 79percent at 28 V and twelve.eight-W output power. Self-synchronous category-E transistor rectifier operation is analyzed theoretically in the time domain and validated with harmonic-balance simulations using an improved nonlinear model for a GaN HEMT. The simplified theoretical analysis provides a helpful starting point for prime-efficiency self-synchronous power rectifier style, that will, in turn, be extended to high-efficiency oscillating power inverter design.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

PROJECT TITLE : Multistage GAN for Fabric Defect Detection ABSTRACT: Fabric flaw identification is a fascinating yet difficult topic. The complexity of both fabric textures and defects has resulted in a plethora of ways for detecting
PROJECT TITLE :Fully Vertical GaN p-i-n Diodes Using GaN-on-Si EpilayersABSTRACT:Using GaN-on-Si epilayers, for the first time, fully vertical p-i-n diodes are demonstrated when Si substrate removal, transfer, and n-electrode
PROJECT TITLE :A GaN Nanowire-Based Photodetector With Ag Nanowires as Transparent ElectrodesABSTRACT:The fabrication and the characterization of a absolutely nanowire-based UV photodetector are reported. The photodetector consists
PROJECT TITLE :Highly Efficient and Multipaction-Free P-Band GaN High-Power Amplifiers for Space ApplicationsABSTRACT:In this paper, the authors report upon the development of multipaction-free P-band (UHF) GaN high-power amplifiers
PROJECT TITLE :Sezawa Propagation Mode in GaN on Si Surface Acoustic Wave Type Temperature Sensor Structures Operating at GHz FrequenciesABSTRACT:This letter investigates the applicability of Sezawa propagation mode for various