Photoluminescence study of self-assembled GaAs quantum wires on (631)A-oriented GaAs substrates ABSTRACT:The authors report a low-temperature photoluminescence (PL) study of multiple GaAs layers grown between AlAs(0.6 nm)/GaAs(0.6 nm) short-period superlattice barriers (SLBs) simultaneously grown on both GaAs(631)A and (100) substrates. Five GaAs-layers of different nominal thicknesses (LW, ranging from 12 to 2.4 nm) were grown by molecular beam epitaxy. By using (631)A-oriented substrates a self-organized and highly ordered corrugation is obtained in the growth of the GaAs layers, and at the end of the SLB growth, flat surfaces are found. Whereas, for the (100)-oriented sample, flat interfaces are confirmed after the growth of GaAs and SLB layers. By reducing LW below ∼3.6 nm in the (631) sample, strong quantum wire (QWR)-like confinement is achieved as deduced from polarized PL spectroscopy where polarization degrees as large as 0.43 are obtained. The PL emission energy of the (631)-QWRs is redshifted, as compared with the transitions of the (100)-oriented quantum wells, when LW is reduced. The authors explain this energy shift by the widening of the effective thickness of the confinement regions in the GaAs layers. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)
