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    Microelectronics and Nanometer Structures

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    Display # 
    Title
    Graphene functionalization and seeding for dielectric deposition and device integration
    Understanding image contrast to optimize procedures for focused ion beam contact level circuit editing
    Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation
    Quantification of cesium surface contamination on silicon resulting from SIMS analysis
    Enhanced green emission from UV down-converting Ce3+–Tb3+ co-activated ZnAl2O4 phosphor
    UV capillary force lithography for multiscale structures
    Impact of mask absorber thickness on the focus shift effect in extreme ultraviolet lithography
    High-resolution nanopatterning by achromatic spatial frequency multiplication with electroplated grating structures
    Analytical and experimental evaluation of a counting method for particles added during the mask handling process
    Conformally coating vertically aligned carbon nanotube arrays using thermal decomposition of iron pentacarbonyl
    Photoelectron spectroscopy studies of plasma-fluorinated epitaxial graphene
    Effect of functionalization on the electrostatic charging, tunneling, and Raman spectroscopy of epitaxial graphene
    Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane
    Enormous shrinkage of carbon nanotubes by supersonic stress and low-acceleration electron beam irradiation
    Graphene stripper foils
    Surface functionalization of graphenelike materials by carbon monoxide atmospheric plasma treatment for improved wetting without structural degradation
    Complementary voltage inverters with large noise margin based on carbon nanotube field-effect transistors with SiNx top-gate insulators
    Analysis of defect-free GaSb/GaAs(001) quantum dots grown on the Sb-terminated (2 × 8) surface
    Characterization of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (001) GaAs substrates
    Electrical properties of C60 and Si codoped GaAs layers
    Growth of GaSb1-xBix by molecular beam epitaxy
    Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy
    InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE
    Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy
    Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers
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