Molecular beam epitaxy control and photoluminescence properties of InAsBi ABSTRACT:Thick InAsBi layers were grown for photoluminescence (PL) characterization. The As to In overpressure ratio was carefully characterized and adjusted to achieve Bi-droplet-free surfaces. A closed loop feedback system was used to maintain the As overpressure during a 5-h deposition sequence. Despite a high degree of control of the growth parameters, evidence for local phase separation was observed in the PL spectra. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Magnetic anisotropy of GaAs/Fe/Au core-shell nanowires grown by MBE Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit