Layout geometry impact on nLDMOS devices for high-voltage ESD protection PROJECT TITLE :Layout geometry impact on nLDMOS devices for high-voltage ESD protectionABSTRACT:N-channel, lateral, double-subtle MOS (NLDMOS) devices with finger-kind, sq.-type, and octagon-type layout styles are investigated and fabricated during a zero.5-μm 18 V CMOS-DMOS (CDMOS) process. The square-type nLDMOS achieves the highest ESD failure current of four.seven A and is also the device occupying the littlest chip area among the 3 layout designs. In read of the world potency, the square-type structure provides a lot of than thirty and 25p.c higher current handling capability per space than the traditional finger-kind and octagonal-type structures, respectively. As a result of of its higher space potency, the square-sort structure is a promising layout for nLDMOS in high-voltage ESD protection applications. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Vehicle Layover Removal in Circular SAR Images via ROSL Heterogeneous Vehicular Networking: A Survey on Architecture, Challenges, and Solutions
