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PROJECT TITLE :

Finite Element Modeling and Analysis of Surface Acoustic Wave Devices in CMOS Technology

ABSTRACT:

Finite component modeling (FEM) and performance analysis of surface acoustic wave (SAW) devices that are developed in complementary metal-oxide-semiconductor (CMOS) technology is presented. An in depth three-D model with eighteen CMOS layers and a structured FE analysis methodology are laid out to extract the acoustic behavior of the substrate and also the piezoelectric material of interest, ZnO. The model represents the zero.five-$murm m$ AMIS 3-metal, 2-poly process that is used to fabricate CMOS-SAW devices. A three-step analysis that encompasses modal, harmonic, and transient simulations is detailed. Experimental characterization results for the fabricated CMOS-SAW devices with operating frequency of 32two.7 MHz show shut agreement with the FE simulations with zero.8percent and 17% deviations for operation frequency and 3-dB bandwidth, respectively. FEM results also show $-6%$ deviations for most rejection bandwidth when put next to the SAW equivalent-circuit-primarily based crossed-field model. Displacement, stress, and strain maps for wave propagation, induced voltage distribution, and section responses are presented. The results demonstrate that business FEM toolsets can give valuable insight into understanding acoustoelectric interactions and wave characteristics. Moreover, they'll readily be used for correct style parameter extraction and reliable simulation of SAW device performance generally.


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