Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes PROJECT TITLE :Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain ElectrodesABSTRACT:We have a tendency to demonstrate a 2-dimensional (2D) multilayered molybdenum disulfide (MoS2) transistor with molybdenum (Mo) facet and edge contacts, which is deposited using a dc-sputtering method. It exhibits field-impact mobility of 23.9 cm2/Vs and ON/OFF ratio of 106 in a linear region. A current-voltage study under different temperatures (three hundred-393 K) reveals that the Mo-MoS2 transistor shows a band transport characteristics, and a Schottky barrier height of 0.fourteen eV is estimated using a thermionic emission theory. Finally, the aspect and edge contacts of Mo-MoS2 are confirmed through the transmission electron microscope analysis. Our results not solely show that Mo will be another contact metal to different low work-operate metals however conjointly that the sting contact could play an necessary role in resolving the performance degradation over thickness increase of the MoS2 channel layer. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Implementation of the DWT in a GPU through a Register-based Strategy Dual Purpose Near- and Far-Field UHF RFID Coil Antenna With Non-Uniformly Distributed-Turns
