Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs” PROJECT TITLE :Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs”ABSTRACT:In our original work [1], we demonstrated the usage of N-IMP in STI SiO2 to relax the compressive stress within the n-MOSFETs and more improve the core device performance accordingly. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Changes to the Editorial Board Exploiting mobile crowdsourcing for pervasive cloud services: challenges and solutions