Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences PROJECT TITLE :Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and DifferencesABSTRACT:We have a tendency to gift a close analysis of hot-carrier degradation (HCD) in graphene field-impact transistors (GFETs) and compare those findings with the bias-temperature instability (BTI). Our results show that the HCD in GFETs is recoverable, similar to its BTI counterpart. Moreover, each the degradation mechanisms strongly interact. Explicit attention is paid to the dynamics of HCD recovery, which can be well fitted with the capture/emission time (CET) map model and also the universal relaxation perform for a few stress conditions, quite kind of like the BTI in each GFETs and Si technologies. The main results of this paper is an extension of our systematic methodology for benchmarking new graphene technologies for the case of HCD. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Computational Cost Reduction of Nondominated Sorting Using the M-Front Foreword Special Section on the 60th Anniversary of the International Electron Device Meeting