PROJECT TITLE :

Transient Analysis of TSV Equivalent Circuit Considering Nonlinear MOS Capacitance Effects

ABSTRACT:

Identical circuit model for the transient analysis of through-silicon vias (TSV) taking into account nonlinear metal-oxide-semiconductor effects is proposed. The model takes under consideration the nonlinear behavior of the doped silicon substrate in presence of the electrical potential difference because of the transient voltage between the TSVs. The impact of your time-variant capacitance between the via and also the substrate on crosstalk and signal propagation is analyzed.


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