PROJECT TITLE :

Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High- $k$/Metal Gate CMOS Process

ABSTRACT:

The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in twenty eight-nm high- $k$/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET while not the pickup structure inserted into its source region will sustain the upper ESD level and a lot of compact layout space.


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