PROJECT TITLE :

Telecommunication wavelength GaAsBi light emitting diodes

ABSTRACT:

GaAsBi light-weight emitting diodes containing ~half dozen% Bi are grown on GaAs substrates. Smart space-temperature electroluminescence spectra are obtained at current densities as low as eight Acm-a pair of. Measurements of the integrated emitted luminescence recommend that there is a continuum of localised Bi states extending up to 75 meV into the bandgap, which is in sensible agreement with previous photoluminescence studies. X-ray diffraction analysis shows that strain relaxation has most likely occurred within the thicker samples grown in this study.


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