PROJECT TITLE :
A Compact Model of Subthreshold Current With Source/Drain Depletion Effect for the Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs
During this paper, an analytical potential-primarily based model within the subthreshold regime for brief-channel junctionless cylindrical surrounding-gate MOSFETs is proposed as the source/drain depletion result thought of. The threshold voltage ( ), subthreshold slope, and drain-induced barrier lowering are also correspondingly derived, which offer specific explanations of the short-channel effects on junctionless MOSFETs within the subthreshold regime. The compact model is verified by the numerical simulation, and therefore the results match well.
Did you like this research project?
To get this research project Guidelines, Training and Code... Click Here