A Compact Model of Subthreshold Current With Source/Drain Depletion Effect for the Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs


During this paper, an analytical potential-primarily based model within the subthreshold regime for brief-channel junctionless cylindrical surrounding-gate MOSFETs is proposed as the source/drain depletion result thought of. The threshold voltage ( ), subthreshold slope, and drain-induced barrier lowering are also correspondingly derived, which offer specific explanations of the short-channel effects on junctionless MOSFETs within the subthreshold regime. The compact model is verified by the numerical simulation, and therefore the results match well.

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