A New Etch Planarization Technology to Correct Non-Uniformity Post Chemical Mechanical Polishing


The introduction of three-D structures and new materials for advanced logic devices at very fine feature size presents challenges for inside-wafer and wafer-to-wafer thickness uniformity control that is critical for yield and performance. For typical chemical mechanical polishing technology, the standard skinny film uniformity across the full wafer might not meet the required variation target of two–three nm at some critical levels. Furthermore, wafer-to-wafer uniformity variation requires a wafer by wafer approach to uniformity correction. During this paper, a novel etch planarization technology is presented that mixes a conventional production-proven etch method that's temperature sensitive with an inductively coupled plasma reactor equipped with a novel electrostatic chuck that provides die level thermal management. Improved method control permits cost effective uniformity enhancements in far more than eighty five%.

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