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Analysis of 270/290/330-nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Different Al Content in Quantum Wells and Barriers

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PROJECT TITLE :

Analysis of 270/290/330-nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Different Al Content in Quantum Wells and Barriers

ABSTRACT:

The optical and electrical properties of 270/290/330-nm AlGaN-based deep ultraviolet (UV) lightweight-emitting diodes (LEDs) with totally different Al content in quantum wells and barriers have been investigated systematically. Primarily based on the experimental and numerical study, it's observed that the UV LEDs with longer wavelength and lower Al composition in AlGaN multiple quantum wells (MQWs) possess less dislocation density, higher light-weight output power, and external quantum potency. Massive ideality factors calculated from the I–V curves and simulated energy band profiles indicate that the current within the deep UV LEDs with high Al content is dominated by tunneling mechanism, that is attributed to the resulting potential drop in the active region caused by massive polarization field in AlGaN MQWs.


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Analysis of 270/290/330-nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Different Al Content in Quantum Wells and Barriers - 4.5 out of 5 based on 2 votes

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