PROJECT TITLE :
Gate Length Dependence of Large-Signal Output Characteristics for the MOSFETs in the Breakdown Region Using X-Parameter Model
In this letter, the gate length dependence of and intercept behaviors for the MOSFETs within the breakdown region is first analyzed using the X-parameter model. Shorter gate length decreases coefficients and will increase coefficients at high drain voltage and high input power due to the many RF avalanche impact in the high field region. and coefficients are determined using artificial neural network. Good agreement between the measured and fitted output scattering wave is achieved. The presented analysis for the gate length dependence and can be helpful to CMOS power amplifier styles with the scaled-down MOSFETs.
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