PROJECT TITLE :
GaN-Based Multiquantum Well Light-Emitting Diodes With Tunnel-Junction-Cascaded Active Regions
We report the fabrication of GaN-based multiquantum well light-emitting diode (LED) with tunnel-junction (TJ)-cascaded active region. It had been found from X-ray diffraction spectra that crystal quality of the TJ LED was nearly identical to that of the standard LED. Compared with the conventional LED, it had been found that we might achieve 35% higher output power from the TJ LED thanks to the repeated use of electrons and holes for photon generation. It had been conjointly found that the external quantum efficiency drooped by 26.three% and 18.seven% for the TJ LED and the standard LED, respectively, as we tend to increased the injection current density to eighty A/cm $^mathrm mathbf 2$ . Furthermore, it absolutely was found that forward voltages measured with an injection current density of twenty A/cm $^mathrm mathbf 2$ were 8.ninety four V for the TJ LED. The big forward voltage observed from the TJ LED should be attributed to the massive TJ resistance.
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