PROJECT TITLE :
High-Voltage Breakdown and the Gunn Effect in GaAs/AlGaAs Nanoconstrictions
We tend to demonstrate dramatic breakdown behavior in this through GaAs/AlGaAs nanoconstrictions (NCs), and realize that this exhibits multiple signatures characteristic of the Gunn effect. These include current fluctuations and hysteresis, and electroluminescence that are per the formation of Gunn domains. An analytical model is developed to describe the present–voltage characteristics of the NCs prior to the onset of the breakdown, and divulges the conduction through them to be barrier restricted underneath low bias. A comparison of the results of these calculations with experiment furthermore suggests that the Gunn effect in these devices is triggered, once the phenomenon of drain-induced barrier lowering becomes sufficiently developed to support the injection of enormous numbers of electrons into the NC. Our paper, thus, demonstrates how the Gunn result could be manipulated through nanoscale tailoring of semiconductors, a result that will have implications for the event of solid-state terahertz technology.
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