Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity

1 1 1 1 1 Rating 4.90 (78 Votes)

PROJECT TITLE :

GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity

ABSTRACT:

In this letter, InGaN/GaN multiquantum well LEDs were fabricated with aluminum-doped zinc oxide (AZO) clear conductive layer (TCL) grown by metal organic chemical vapor deposition (MOCVD) on n+-InGaN contact layer. Ultralow forward voltage ( $V_!f$ ) of 2.eighty six V at twenty mA was obtained, attributing to the epitaxial-like excellent interface between AZO/n+-InGaN contact layer confirmed by high-resolution transmission electron microscopy. The most worthy is that the $V_!f$ uniformity will be demonstrated on a a pair of-in wafer with a commonplace deviation of zero.02 V. Combined with the wonderful lightweight extraction, the MOCVD grown AZO-TCL is anticipated to be another of tin-doped indium oxide in GaN-primarily based LEDs for mass production.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity - 4.9 out of 5 based on 78 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...