GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity


In this letter, InGaN/GaN multiquantum well LEDs were fabricated with aluminum-doped zinc oxide (AZO) clear conductive layer (TCL) grown by metal organic chemical vapor deposition (MOCVD) on n+-InGaN contact layer. Ultralow forward voltage ( $V_!f$ ) of 2.eighty six V at twenty mA was obtained, attributing to the epitaxial-like excellent interface between AZO/n+-InGaN contact layer confirmed by high-resolution transmission electron microscopy. The most worthy is that the $V_!f$ uniformity will be demonstrated on a a pair of-in wafer with a commonplace deviation of zero.02 V. Combined with the wonderful lightweight extraction, the MOCVD grown AZO-TCL is anticipated to be another of tin-doped indium oxide in GaN-primarily based LEDs for mass production.

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