Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Light Extraction Efficiency Improvement by Curved GaN Sidewalls in InGaN-Based Light-Emitting Diodes

1 1 1 1 1 Rating 4.88 (24 Votes)

ABSTRACT:

Polygonal GaN sidewalls are fabricated using a laser scriber and a wet-etching process. After a two-step laser scribing process and a hot acid etching treatment, curved GaN sidewalls are formed consisting of the chemically stable (10-1-2) crystallographic plane of GaN epilayer and the laser-cutting facets. Compared to light-emitting diodes (LEDs) with vertical and inclined GaN sidewalls, light output power of LEDs with these curved GaN sidewalls exhibits an improvement of 10.2% and 6.8%, respectively. I-V curve shows that there is no deterioration to the curved-sidewall LEDs' electronic properties. This enhancement of light output power is also confirmed by numerical simulations using the ray-tracing method.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Light Extraction Efficiency Improvement by Curved GaN Sidewalls in InGaN-Based Light-Emitting Diodes - 4.9 out of 5 based on 24 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...