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Enhanced Light Extraction of GaN-Based Green Light-Emitting Diodes With GaOOH Rods

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ABSTRACT:

We reported the enhanced light extraction efficiency in InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) with gallium oxide hydroxide (GaOOH) rods. The GaOOH rods were prepared by an aqueous gallium nitrate solution at 80$^{circ}{rm C}$ and then coated on the surface of indium tin oxide electrodes of LEDs by a simple drop coating process. The synthesized GaOOH rods indicated a rhombus-shaped rod structure with average lengths of 2 $mu{rm m}$ and lateral dimensions of 50–500 nm. For LEDs with GaOOH rods, the light output powers were increased by 24.3% and 26.4% compared to the conventional LED on patterned sapphire substrate at 20 mA and 100 mA, respectively. Also, there was no distinct degradation in electrical characteristics of LEDs with GaOOH rods.


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Enhanced Light Extraction of GaN-Based Green Light-Emitting Diodes With GaOOH Rods - 4.8 out of 5 based on 49 votes

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