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2.7- Single-Frequency Low-Threshold Sb-Based Diode-Pumped External-Cavity VCSEL

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We present the design, technology, and performances of a tunable Sb-based diode-pumped type-I quantum-well (QW) vertical-external-cavity surface-emitting lasers emitting at 2.7 $mu{rm m}$. The half vertical-cavity surface-emitting laser (VCSEL) structure was grown by molecular beam epitaxy with quantum-well growth temperature of 440$^{circ}{rm C}$. The sample was thermally annealed to optimize the QW gain design. We report on room-temperature continuous-wave laser with 0.17-mW output power and low threshold incident pump intensity of 0.7 kW/${rm cm}^{2}$ while pumping at 830 nm with a commercial diode laser. The external cavity provides a circular ${rm TEM}_{00}$ beam with a low divergence of 3.6$^{circ}$. The short mm-long optical cavity laser exhibits tunable single frequency operation, with a sidemode suppression ratio $gg{23}~{rm dB}$, a linewidth $ll{4}~{rm GHz}$, and a linear light polarization. Thermal and optical properties are studied.

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2.7- Single-Frequency Low-Threshold Sb-Based Diode-Pumped External-Cavity VCSEL - 4.8 out of 5 based on 49 votes

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