Bonding InGaAsP/ITO/Si Hybrid Laser With ITO as Cathode and Light-Coupling Material


A 1.5-$mu{rm m}$ InGaAsP/ITO/Si hybrid laser with indium tin oxide (ITO) as both a cathode and a light-coupling material is presented. The InGaAsP gain structure with a transparent ITO cathode is flip-chip bonded onto a patterned silicon-on-insulator wafer. The light generated in the InGaAsP multiquantum wells is coupled through the ITO cathode into the Si waveguide to form an InGaAsP/ITO/Si hybrid laser. The threshold current density of this hybrid laser is 20 ${rm kA}/{rm cm}^{2}$ at 210 K. Due to the advantages of post-bonding and simplicity of the fabrication process, such a hybrid laser may be a promising Si light source.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

PROJECT TITLE :Room Temperature Si–Si Direct Bonding Technique Using Velcro-Like SurfacesABSTRACT:Si surfaces were functionalized by anodization to create nanoneedles. Such surfaces allow Velcro-like bonding at room temperature
PROJECT TITLE :On the New Terminology Introduced in Std. IEEE P3003.2 “Recommended Practice for Equipment Grounding and Bonding in Industrial and Commercial Power Systems”ABSTRACT:The technical customary IEEE P3003.a pair
PROJECT TITLE :High-Precision Wafer-Level Cu–Cu Bonding for 3-DICsABSTRACT:A high-precision Cu–Cu bonding system for 3-D ICs (three-DICs) fabrication adopting a brand new precision alignment methodology is proposed. A new
PROJECT TITLE :Pixel-Parallel 3-D Integrated CMOS Image Sensors With Pulse Frequency Modulation A/D Converters Developed by Direct Bonding of SOI LayersABSTRACT:We have developed for the primary time a three-D integrated CMOS
PROJECT TITLE :A three-mask process for fabricating vacuum-sealed capacitive micromachined ultrasonic transducers using anodic bondingABSTRACT:This paper introduces a simplified fabrication method for vacuum-sealed capacitive

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry