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Scintillation Characteristics of Indium Doped Cesium Iodide Single Crystal

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PROJECT TITLE :

Scintillation Characteristics of Indium Doped Cesium Iodide Single Crystal

ABSTRACT:

Indium doped cesium iodide (CsI:In) single crystals were grown by the Bridgman technique. A comparison study of the scintillation properties of our CsI:In and commercially out there CsI:Tl single crystals was disbursed, together with scintillation decay time, energy resolution, non-proportionality, absolute lightweight yield, and afterglow. Under X-ray excitation, the CsI:In emission corresponds to a symmetrical broad band centered at 545 nm. Its scintillation decay time is 1.99 ±zero.02 μs at area temperature beneath 137Csγ-ray excitation. The CsI:In lightweight yield was found to be 34,700 ±1735 photons per MeV with an energy resolution of 9.1 ±zero.threepercent, based on the heart beat height spectra beneath 137Cs excitation. The afterglow level of CsI:In over a hundred thirty ms after pulsed X-ray excitation was two orders of magnitude beyond that of CsI:Tl.


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Scintillation Characteristics of Indium Doped Cesium Iodide Single Crystal - 4.8 out of 5 based on 49 votes

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