High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2


We report high mobility Si-face 4H-SiC MOSFET results via a novel interface engineering technique employing a gate-stack consisting of lanthanum silicate (LaSiOx) and atomic layer deposited SiO2. Peak field result mobility of 132.6 cm $^2$ /V $cdot $ s has been achieved while maintaining a positive threshold voltage (three.1 V). From the peak field result mobility’s dependence on measurement temperatures, it has been found that the mobility of l. a. containing MOSFET is limited by phonon scattering.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

PROJECT TITLE :High Voltage Gain Interleaved Boost Converter with Neural Network Based MPPT Controller for Fuel Cell Based Electric Vehicle ApplicationsABSTRACT:Due to the additional vigorous regulations on carbon gas emissions
PROJECT TITLE :Pixel Binning for High Dynamic Range Color Image Sensor Using Square Sampling Lattice - 2018ABSTRACT:We propose a brand new pixel binning theme for color image sensors. We minimized distortion caused by binning
PROJECT TITLE :High Resolution Beacon-Based Proximity Detection for Dense Deployment - 2018ABSTRACT:The emergence of Bluetooth low energy (BLE) beacons has promoted the development of proximity-primarily based service (PBS), which
PROJECT TITLE :Low Cost and High Accuracy Data Gathering in WSNs with Matrix Completion - 2018ABSTRACT:Matrix completion has emerged very recently and provides a brand new venue for low value knowledge gathering in Wireless Sensor
PROJECT TITLE :High speed and low power preset-able modified TSPC D flip-flop design and performance comparison with TSPC D flip-flop - 2018ABSTRACT:Positron emission tomography (PET) could be a nuclear functional imaging technique

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry