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High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2

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PROJECT TITLE :

High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2

ABSTRACT:

We report high mobility Si-face 4H-SiC MOSFET results via a novel interface engineering technique employing a gate-stack consisting of lanthanum silicate (LaSiOx) and atomic layer deposited SiO2. Peak field result mobility of 132.6 cm $^2$ /V $cdot $ s has been achieved while maintaining a positive threshold voltage (three.1 V). From the peak field result mobility’s dependence on measurement temperatures, it has been found that the mobility of l. a. containing MOSFET is limited by phonon scattering.


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High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2 - 4.9 out of 5 based on 45 votes

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