PROJECT TITLE :
Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support
A type-III (broken gap) band alignment heterojunction vertical in-line InAs/AlSb/GaSb tunnel FET, as well as a two-nm-skinny AlSb tunneling barrier is demonstrated. The impact of overlap and underlap gate is studied experimentally and supported additional by quasi-stationary 2-D TCAD Sentaurus device simulations. Hydrogen silsesquioxane is used as a completely unique mechanical support structure to suspend the 10-nm-thin InAs drain with enough undercut to be in a position to demonstrate an overlap gate design. The overlap gate InAs/AlSb/GaSb TFET shows an ON current density of 22 μA/μm2 at V and also the subthreshold slope is 194 mV/decade at area temperature and 46 mV/decade at a hundred K.
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