Amplification of Nonlinearity in Multiple Gate Transistor Millimeter Wave Mixer for Improvement of Linearity and Noise Figure


Current amplification of nonlinearity in an exceedingly multiple gate transistor cell is proposed to simultaneously improve the linearity and noise performance of amplifier and mixer, and demonstrated in a very mixer fabricated with 45 nm SOI CMOS. The mixer achieves output third order intercept point of 21.4 dBm, power gain of three.4 dB, and single facet band noise figure (NF) of 9.5 dB at radio frequency of thirty one GHz. The is 5 dB higher and NF is four dB under the best for CMOS millimeter wave mixers.

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