PROJECT TITLE :
Temperature Dependence and Dynamic Behavior of Full Well Capacity in Pinned Photodiode CMOS Image Sensors
This paper presents an analytical model of the full well capability (FWC) in pinned photodiode (PPD) CMOS image sensors. By introducing the temperature dependence of the PPD pinning voltage, the present model is extended (with respect to previous works) to consider the effect of temperature on the FWC. It is shown, with the support of experimental information, that whereas in dark conditions the FWC increases with temperature, a decrease is observed if FWC measurements are performed underneath illumination. This paper additionally shows that after a light-weight pulse, the charge stored within the PPD drops because the PPD tends toward equilibrium. On the basis of those observations, an analytical model of the dynamic behavior of the FWC in noncontinuous illumination conditions is proposed. The model is ready to reproduce experimental knowledge over six orders of magnitude of time. Each the static and dynamic models can be helpful tools to correctly interpret FWC changes following style variations and to accurately outline the operating conditions throughout device characterizations.
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