First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

PROJECT TITLE :

First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

ABSTRACT:

We have a tendency to report the primary ever terahertz monolithic integrated circuit amplifier primarily based on twenty five-nm InP high electron mobility transistor (HEMT) method demonstrating amplification at 1 THz (one thousand GHz) with 9-dB measured gain at one THz. This milestone was achieved with a twenty five-nm InP HEMT transistor, which exhibits three.5-dB most out there gain at 1 and one.five THz projected $f_mathrm mathbf MAX$ .

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