A High-Power 105–120 GHz Broadband On-Chip Power-Combined Frequency Tripler


We report on the design, fabrication and characterization of a high-power and broadband one zero five–120 GHz Schottky diode frequency tripler primarily based on a novel on-chip power combining concept that allows superior power handling than traditional approaches. The chip options twelve anodes on a 50 $murm m$ thick GaAs substrate. At space temperature, the tripler exhibits a seventeenpercent three dB bandwidth and a $sim 30percent$ peak conversion efficiency for a nominal input power of around 350–four hundred mW, and $sim twenty%$ potency for its maximum operational input power of 800–90zero mW. This tripler will deliver most power levels terribly shut to two hundred mW. The on-chip power-combined frequency tripler is compared with a ancient tripler designed for the same band using the same design parameters.

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