Using a transient electrical model, in which the impacts of Si surface potential and thermal excitation were taken into account, the charging and discharging processes in a metal nanocrystal (NC) memory were simulated. For an NC memory with 2.25 nm tunnel oxide layer, the retention time is more than ten years, and the program and erase time can reach 45 and 60 μs at ±10 V applied voltage, respectively. Moreover, the carrier storage effect caused by NCs has great influence on capacitance-voltage (C-V) characteristics. The flat-band voltage shift ΔVFB and the charge density Qnc are greatly dependent on the start sweep gate voltage VG and the sweep rate dV/dt. The large memory window reveals the high carrier injection efficiency for both electrons and holes, and it increases steadily from 0.86 to 8.30 V with the increase of the start applied gate voltage from ±2 to ± 6 V. When the sweep rate is slow enough, the flat-band voltage shift and the stored charges will reach a saturation state. Hence, the simulation C-V characteristics of metal NC memory may guide the devices design or to predict their performances.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

PROJECT TITLE :Power Allocation Study for Non-Orthogonal Multiple Access Networks With Multicast-Unicast Transmission - 2018ABSTRACT:This Project considers a downlink single-cell non-orthogonal multiple access (NOMA) network,
PROJECT TITLE :A Comprehensive Study on Social Network Mental Disorders Detection via Online Social Media Mining - 2018ABSTRACT:The explosive growth in popularity of social networking ends up in the problematic usage. An increasing
PROJECT TITLE :Empirical Study of Face Authentication Systems Under OSNFD Attacks - 2018ABSTRACT:Face authentication has been widely available on smartphones, tablets, and laptops. As various personal pictures are published in
PROJECT TITLE :Comparative study of 16-order FIR filter design using different multiplication techniques - 2017ABSTRACT:This study represents planning and implementation of an occasional power and high speed sixteen order FIR
PROJECT TITLE :Study On Ofdm Frequency Offset Estimation Based On Emd Algorithm - 2017ABSTRACT:A new methodology of applying EMD (empirical mode decomposition) algorithm to appreciate the CFO (carrier frequency offset) estimation

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry