ABSTRACT:

In this letter, we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) cointegration with 380 μm-height Cu through-silicon via (TSV) arrays for programmable 3-D interconnects. Nonvolatile resistive switching of Pt/TiO2 /Pt thin films is first characterized with a resistance ratio up to five orders of magnitude. Then, cointegration of Pt/TiO2/Pt or Pt/TiO2 memory cells on 140 and 60 μm diameter Cu TSVs is fabricated. Repeatable nonvolatile bipolar switching of the ReRAM cells is demonstrated for different structures.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


PROJECT TITLE : Asymmetric Fault Ride through Capability Enhancement of DFIG Based Variable Speed Wind Generator by DC Resistive Fault Current Limiter - 2016 ABSTRACT: Doubly fed induction generator (DFIG) based mostly variable
PROJECT TITLE :Improving Performance by Doping Gadolinium Into the Indium-Tin–Oxide Electrode in HfO2-Based Resistive Random Access MemoryABSTRACT:This letter investigates the characteristics of doping gadolinium (Gd) in an
PROJECT TITLE :A Fast and Efficient Design Method for Circuit Analog Absorbers Consisting of Resistive Square-Loop ArraysABSTRACT:This paper proposes a completely unique optimization design technique for circuit analog absorbers
PROJECT TITLE :Resistive Associative ProcessorABSTRACT:Associative Processor (AP) combines information storage and information processing, and functions simultaneously as a massively parallel array SIMD processor and memory. Traditionally,
PROJECT TITLE :Experimental Characterization of Physical Unclonable Function Based on 1 kb Resistive Random Access Memory ArraysABSTRACT:In this letter, we propose a reliable style of physical unclonable perform (PUF) exploiting

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry