The deposition of copper oxide onto vertically well-aligned n-ZnO nanowires by sputtering and the fabrication of p-copper oxide/n-ZnO coaxial nanowire photodiodes are reported. It was found that we could change the copper oxidation number to obtain Cu2O/ZnO nanowire photodiode, Cu4O3/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode by simply changing the O flow rate during deposition. It was also found that noise equivalent powers were 6.1 × 10-11, 3.8 × 10-10, and 7.2 × 10-8 W while normalized detectivities were 6.35 × 109, 1.02 × 109, and 5.37 × 106 cmHz0.5 W-1 for the fabricated Cu2O/ZnO nanowire photodiode, Cu4O3 /ZnO nanowire photodiode and CuO/ZnO nanowire photodiode, respectively.

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