PROJECT TITLE :

MOSFETs Made From GaN Nanowires With Fully Conformal Cylindrical Gates

ABSTRACT:

We report novel metal–oxide–semiconductor field effect transistors (MOSFETs) based on individual gallium nitride (GaN) nanowires with fully conformal cylindrical gates. The W/Al $_2$O$_3$ gates were deposited by atomic layer deposition. Reverse-bias breakdown voltages exceeded the largest gate voltage tested (−35 V). The nanowire MOSFETs showed complete pinchoff, with threshold voltages between −4 and −12 V. Maximum transconductances exceeded 10 μS, and ON/OFF current ratios higher than 10 $^8$ were measured. Significant gating hysteresis and memory effects were also present, indicative of charge traps. Although further optimization is needed, these results represent a promising step forward in the development of efficient GaN nanowire-based FETs.


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