PROJECT TITLE :
High Current Gain Microwave Performance of Organic Metal-Base Transistor
We report the realization of 140 nm emitter TPD/CuPc (N,N′-diphenyl-N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine/copper phthalocyanine) with cutoff frequency f$_T$ = 300 kHz. Our devices were grown on high-resistivity p-type float-zone silicon collector and implemented with an aluminum grid base feature a high and stable current gain well above 400. The present transistors are the first metal-base transistors employing double hole injection layer to feature current gain without any sign of degradation.
Did you like this research project?
To get this research project Guidelines, Training and Code... Click Here