n-Type Metal-Base Organic Transistor


This investigation proposes an Ir(ppy)3/Ir(mpp)3 double-emitter heterojuction metal-base transistors grown by vacuum sublimation deposition. The improved structure exhibits the advantages of high ON-to-OFF current ratio 4.98 × 106 and high current gains (β) 355.6. The device survived for almost two months with a slight dropped in these parameters before it is completely gone in four months. Furthermore, this study elucidates the relation between leakage current, current gains, and ON-to-OFF current ratio.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

PROJECT TITLE :Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep-Level Transient Spectroscopy and Isochronal Annealing StudiesABSTRACT:Deep levels were investigated by the capacitance mode deep-level
PROJECT TITLE :Hot-Carrier-Induced On-Resistance Degradation of n-Type Lateral DMOS Transistor With Shallow Trench Isolation for High-Side ApplicationABSTRACT:During this paper, the hot-carrier-induced on-resistance degradation
PROJECT TITLE : Multi-Core Embedded Wireless Sensor Networks Architecture and Applications - 2014 ABSTRACT: Technological advancements in the silicon industry, as predicted by Moore's law, have enabled integration of billions
PROJECT TITLE :Conduction Mechanism of Se Schottky Contact to n-Type GeABSTRACT :The conduction mechanism of Se/n-type-Ge Schottky diodes is investigated using temperature-dependent current–voltage ($I$–$V$) characteristics.
PROJECT TITLE :Effect of Density of States on Mobility in Small-Molecule n-Type Organic Thin-Film Transistors Based on a Perylene DiimideABSTRACT :Bottom-contact organic thin-film transistors with active layers created of n-type

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry