Optimisation of the dislocation filter layers in 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates


The authors report 1.3-μm InAs/GaAs quantum-dot (QD) lasers monolithically grown on a Si substrate by optimising the dislocation filter layers (DFLs). InAlAs/GaAs strained layer superlattices (SLSs) are presented as DFLs during this study. A distinct improvement within the InAs/GaAs QDs was observed when using InAlAs/GaAs SLSs as a result of of the effective filtering of threading dislocations. Consequently, a laser with a threshold current density of 194 A/cm2 at area temperature and an operating temperature as high as eighty five°C is successfully demonstrated. These results show the potential for integrating III-V QD materials on a Si platform via InAlAs/GaAs SLSs as DFL.

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