Application of a Plasma Arc Lamp for Thermal Processing of Semiconductor Wafers


This paper describes the appliance of a vortex water wall high-pressure argon lamp for a semiconductor annealing method. These lamps have been designed to work up to a 500-kW power level, have a continuous spectrum, similar to daylight, and are used to characterize solar cells. Precise control of the radiated power generated by the lamps is needed, that, in turn, requires an accurate electrothermooptical dynamic model of the lamp and an optothermal model of the wafer. This paper discusses general aspects concerning the modeling of the system consisted of the lamp and the wafer. The main contributions of the paper are the following: 1) a simplified means that of relating the radiation exiting the lamp to the electrical power injected into the lamp, taking under consideration radiation from an isothermal core and absorption in the cold swirling argon gas, the water wall, and also the quartz envelope; and a pair of) a model to describe energy exchange between the lamp and therefore the wafer and experimental results to indicate the nice agreement between the model and the actual equipment. 2 companion papers discuss the details of the arc model and also the discrete-time control algorithms developed to model the wafer subsystem and also the arc subsystem.

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