Email Usinfo@mtechprojects.com
Phone Number+91 9912759050
Open Hours9 am - 6 pm / Mon - Sat

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation

PROJECT TITLE :

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation

ABSTRACT:

This letter presents a fabrication technology of enhancement-mode (E-mode) AlGaN/GaN metal-insulator- semiconductor high-electron mobility transistors (MIS-HEMTs) using 10 keV fluorine ion implantation. An 8 nm low-pressure chemical vapor deposition silicon nitride layer was deposited on the AlGaN as gate dielectric and energy-absorbing layer that slows down the high energy (10 keV) fluorine ions to reduce the implantation harm. The E-mode MIS-HEMTs exhibit a threshold voltage as high as +three.three V with a maximum drain current over two hundred mA/mm (250 mA/mm for depletion-mode MIS-HEMTs) and a high on/off current ratio of 109. Meanwhile, the E-mode MIS-HEMT dynamic RON is solely 1.fifty three times larger than the static RON after off-state VDS stress of five hundred V.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

Low Frequency Noise and Gate Bias Instability in Normally OFF AlGaN/GaN HEMTs

PROJECT TITLE :Low Frequency Noise and Gate Bias Instability in Normally OFF AlGaN/GaN HEMTsABSTRACT:In this transient, traps-related dispersion phenomena are investigated on GaN/AlGaN MOS-high-electron mobility transistors. Pulsed

Normally Off ECG SoC With Non-Volatile MCU and Noise Tolerant Heartbeat Detector

PROJECT TITLE :Normally Off ECG SoC With Non-Volatile MCU and Noise Tolerant Heartbeat DetectorABSTRACT:This paper describes an electrocardiograph (ECG) monitoring SoC using a non-volatile MCU (NVMCU) and a noise-tolerant instantaneous

A Brief History of Data Conversion: A Tale of Nozzles, Relays, Tubes, Transistors, and CMOS

PROJECT TITLE :A Brief History of Data Conversion: A Tale of Nozzles, Relays, Tubes, Transistors, and CMOSABSTRACT:The requirement for higher communication has been one in every of the driving forces behind technology advancements,

Augmented EFIE With Normally Constrained Magnetic Field and Static Charge Extraction

PROJECT TITLE :Augmented EFIE With Normally Constrained Magnetic Field and Static Charge ExtractionABSTRACT:A replacement surface integral equation formulation for scattering from perfectly conducting objects is presented. The

Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

PROJECT TITLE :Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation InvestigationABSTRACT:Al2O3–AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry