Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation


This letter presents a fabrication technology of enhancement-mode (E-mode) AlGaN/GaN metal-insulator- semiconductor high-electron mobility transistors (MIS-HEMTs) using 10 keV fluorine ion implantation. An 8 nm low-pressure chemical vapor deposition silicon nitride layer was deposited on the AlGaN as gate dielectric and energy-absorbing layer that slows down the high energy (10 keV) fluorine ions to reduce the implantation harm. The E-mode MIS-HEMTs exhibit a threshold voltage as high as +three.three V with a maximum drain current over two hundred mA/mm (250 mA/mm for depletion-mode MIS-HEMTs) and a high on/off current ratio of 109. Meanwhile, the E-mode MIS-HEMT dynamic RON is solely 1.fifty three times larger than the static RON after off-state VDS stress of five hundred V.

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