Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation


This letter presents a fabrication technology of enhancement-mode (E-mode) AlGaN/GaN metal-insulator- semiconductor high-electron mobility transistors (MIS-HEMTs) using 10 keV fluorine ion implantation. An 8 nm low-pressure chemical vapor deposition silicon nitride layer was deposited on the AlGaN as gate dielectric and energy-absorbing layer that slows down the high energy (10 keV) fluorine ions to reduce the implantation harm. The E-mode MIS-HEMTs exhibit a threshold voltage as high as +three.three V with a maximum drain current over two hundred mA/mm (250 mA/mm for depletion-mode MIS-HEMTs) and a high on/off current ratio of 109. Meanwhile, the E-mode MIS-HEMT dynamic RON is solely 1.fifty three times larger than the static RON after off-state VDS stress of five hundred V.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

PROJECT TITLE :Low Frequency Noise and Gate Bias Instability in Normally OFF AlGaN/GaN HEMTsABSTRACT:In this transient, traps-related dispersion phenomena are investigated on GaN/AlGaN MOS-high-electron mobility transistors. Pulsed
PROJECT TITLE :Normally Off ECG SoC With Non-Volatile MCU and Noise Tolerant Heartbeat DetectorABSTRACT:This paper describes an electrocardiograph (ECG) monitoring SoC using a non-volatile MCU (NVMCU) and a noise-tolerant instantaneous
PROJECT TITLE :A Brief History of Data Conversion: A Tale of Nozzles, Relays, Tubes, Transistors, and CMOSABSTRACT:The requirement for higher communication has been one in every of the driving forces behind technology advancements,
PROJECT TITLE :Augmented EFIE With Normally Constrained Magnetic Field and Static Charge ExtractionABSTRACT:A replacement surface integral equation formulation for scattering from perfectly conducting objects is presented. The
PROJECT TITLE :Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation InvestigationABSTRACT:Al2O3–AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry