Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric


This paper reports on the fabrication and characterization of gate-last self-aligned in situ SiNx/AlN/GaN MISHEMTs. The devices featured in situ grown SiNx by metal–organic chemical vapor deposition as a gate dielectric and for surface passivation. Selective source/drain regrowth was incorporated to scale back contact resistance. SiNx sidewall spacers and low- $kappa $ benzocyclobutene polymer ( $kappa =two.65$ ) supporting layers were utilized under the gate head to attenuate the parasitic capacitance for prime-frequency operation. The device with a gate length ( $L_G)$ of $zero.twenty three~mu textm$ exhibited a most drain current density ( $I_rm DS)$ exceeding 160zero mA/mm with a high ON/OFF ratio ( $I_mathrmscriptscriptstyle ON/I_mathrmscriptscriptstyle OFF)$ of over $ten^7$ . The present gain cutoff frequency ( $f_T)$ and maximum oscillation frequency ( $f_max )$ were fifty five and 86 GHz, respectively. Further, the result of temperature, from room temperature up to 550 K, on the dc and RF performances of the gate-last self-aligned MISHEMTs was studied.

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