PROJECT TITLE :
Temperature-Dependent Transfer Characteristics of Low Turn-On Voltage InGaZnO Metal-Oxide Devices With Thin Titanium Oxide Capping Layers
This paper reports an InGaZnO thin-film transistor involving a good bandgap gate dielectric of and IGZO/ channel stack. Consistent with our experimental results, the IGZO TFT with a thin channel capping layer shows smart device integrity of an occasional threshold voltage of zero.37 V, a tiny sub-threshold swing of seventy seven mV/decade, and a high mobility of thirty three underneath an occasional drive voltage of . We have a tendency to conjointly demonstrate that the significantly improved electrical property is mainly contributed by the enhanced channel electrical field once capping, related to maximizing charge accumulated capability. The favorable high-temperature transfer characteristics are also obtained in IGZO/ TFT, indicating a weak Fermi-level pinning in IGZO/ channel structure. With the operating temperature increasing any, the thermal activated effect shall dominate IGZO channel property beyond percolation conduction.
Did you like this research project?
To get this research project Guidelines, Training and Code... Click Here