The Thermal Resistance of High-Power Semiconductor Disk Lasers


We have a tendency to gift a model for the simulation of the thermal resistance of flip-chip bonded vertical-external-cavity surface-emitting lasers primarily based on the finite-part methodology. Therefore, we tend to tackle and deepen precedent models with regard to three modifications. Our model for the primary time comprises the whole heat removal, incorporates temperature-dependent heat conductivity of the diamond heat spreader and options the thought of the precise pump distribution. The simulations are in the midst of an intensive experimental investigation of 4 gain chips. Thereby, a high accuracy of our simulations is confirmed. Moreover, we tend to use our model so as to investigate the influence of a ternary distributed Bragg reflector, which lacks in pump light-weight absorption and the next additional heating. Recently, this model was used to push the output power of vertical-external-cavity surface-emitting lasers beyond 100 W.

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