Evidence of Correlated Mobility Fluctuations in p-Type Organic Thin-Film Transistors


We tend to report on the results of noise measurements in p-sort organic skinny-film transistors (TFTs) extending from the subthreshold region into the robust accumulation region over four decades of drain current values. The low-frequency noise made by the devices will be successfully interpreted within the context of a multitrap correlated variety fluctuation—mobility fluctuation (CMF) theory, while neither phonon-induced mobility fluctuation nor carrier number fluctuation mechanisms are capable of justifying the observed noise behavior. The Coulomb scattering parameter is found to be in the order of $10^mathrm mathbf 7$ Vs/C, regarding 3 orders of magnitude larger with respect to crystalline silicon MOSFETs and comparable with what already reported in hydrogenated amorphous silicon TFTs, suggesting a abundant additional relevant contribution coming from CMF in disordered materials.

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